| PART |
Description |
Maker |
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| FQB14N30 FQI14N30 FQB14N30TM |
300V N-Channel MOSFET 14.4 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
300V N-Channel MOSFET 14.4 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
300V N-Channel QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| DN2530N8-G DN2530N3-G |
N-Channel Depletion-Mode Vertical DMOS FETs 200 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
|
Supertex, Inc.
|
| BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT
300 A, 1200 V, N-CHANNEL IGBT
100 A, 1000 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
75 A, 1000 V, N-CHANNEL IGBT
200 A, 1000 V, N-CHANNEL IGBT
50 A, 1600 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
|
| FQB9N30 FQI9N30 |
300V N-Channel MOSFET(漏源电压00V的N沟道增强型MOSFET) 9 A, 300 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MMBF2202PT1 MMBF2202P |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
Power MOSFET 300 mAmps / 20 Volts P−Channel SC/SOT�
|
ON Semiconductor
|
| FDPF14N30T |
N-Channel UniFET MOSFET 300 V, 14 A, 290 m
|
Fairchild Semiconductor
|
| IXGQ170N30PB |
170 A, 300 V, N-CHANNEL IGBT TO-3P, 3 PIN
|
IXYS, Corp.
|
| BSP230-TAPE-13 BSP230-TAPE-7 |
0.21 A, 300 V, 17 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| BST120TRL13 |
300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP SEMICONDUCTORS
|
| HCPL-2503-060E HCPL-2503-320E HCPL-2503-500E HCPL- |
1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.25 Mbps 0.300 INCH, ROHS COMPLIANT, DIP-8
1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.25 Mbps 0.300 INCH, ROHS COMPLIANT, SURFACE MOUNT, DIP-8
|
NEC, Corp.
|
|
